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HAH3DR 1100-S0E

Open Loop transducer using the Hall effect sensor

LEM | HAH-Series | Open Loop Transducer | Busbar Mount

± 1100 ANominal Primary Current
4.75 .. 5.25 VPower Supply
Open Loop TransducerTechnology
40 kHzBandwidth (-1dB)
45 .. 60 mACurrent Consumption (IC)

Additional Technical Details

View Full Specifications
Primary Current, Measuring Range± 1100 A
Supply Voltage4.75 .. 5.25 V
Sensitivity1.82 mV/A
Operating Temperature Range−40 .. 125 °C
Isolation Test Voltage2.5 kV
Primary Nominal Current (IPN)± 1100 A

Standards & Approvals

Typical Applications

Tri-phase transducer. The measurement signal U amplified to supply the user Hall output voltage or current.

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Product Description

The HAH3DR 1100-S0E is an open loop current transducer from LEM delivering an instantaneous output voltage of 2.5 V.

It offers excellent accuracy and very good linearity. Typical applications include Tri-phase transducer. The measurement signal U amplified to supply the user Hall output voltage or current.

Key characteristics from the official datasheet: frequency bandwidth 40 kHz; operating temperature −40 .. 125 °C.

Technical Specifications

General Information
ManufacturerLEM
Product SeriesHAH
Product ReferenceHAH3DR 1100-S0E
Primary Nominal Current± 1100 A
Supply Voltage4.75 .. 5.25 V
Measurement—
MountingBusbar Mount
Application DomainTri-phase transducer. The measurement signal U amplified to supply the user Hall output voltage or current
Electrical Data — HAH3DR 1100-S0E
Primary Nominal Current (IPN)± 1100 A
Primary Current, Measuring Range (IPM)± 1100 A
Supply Voltage (UC)4.75 .. 5.25 V
Current Consumption (IC)45 .. 60 mA
Sensitivity1.82 mV/A
Output Offset Voltage (VO E)2.5 V
Load Resistance (RL)10 kOhm
Insulation Resistance (RINS)500 MOhm
Accuracy & Dynamic Performance
Ratiometricity Error0.5 %
Sensitivity Error± 1 %
Delay Time (tD)4 .. 6 µs
Frequency Bandwidth40 kHz
Output Noise10 mV
Insulation Coordination
RMS Voltage for AC Insulation Test (50 Hz, 1 min) Ud2.5 kV
Environmental & Mechanical Characteristics
Ambient Operating Temperature (TA)−40 .. 125 °C
Ambient Storage Temperature (TA st)−50 .. 125 °C
Mass (m)105 g

Note: Specifications are taken from the official HAH3DR 1100-S0E datasheet. Parameters that could not be confirmed from the datasheet are marked UNVERIFIED.

Dimensions & Drawings

Outline dimensions, pin layout and connection diagrams of the HAH3DR 1100-S0E are shown below.

HAH3DR 1100-S0E outline dimensions and pin layout
Outline dimensions (in mm) and connection diagrams — source: LEM HAH3DR 1100-S0E datasheet
Outline Dimensions & Mechanical Data
Mass105 g

Note: All dimensions are in millimetres. Refer to the official datasheet for the complete dimension drawing.

Typical Applications

Typical applications of the HAH3DR 1100-S0E.

Tri-phase transducer. The measurement signal U amplified to supply the user Hall output voltage or current

Characteristic Curves

The characteristic curves of the HAH3DR 1100-S0E from the official datasheet are shown below.

HAH3DR 1100-S0E characteristic curves
Characteristic curves — source: LEM HAH3DR 1100-S0E datasheet
Accuracy & Dynamic Characteristics
Sensitivity1.82 mV/A
Sensitivity Error± 1 %
Frequency Bandwidth40 kHz
Reference Conditions
Ambient Temperature (TA)25 °C, unless otherwise noted
Output Load Resistance (RL)10 kOhm

Note: Refer to the datasheet for the complete set of characteristic curves.

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