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Hall effect measuring principle
| Primary Current, Measuring Range | −25 ... 25 A |
| Reference Voltage (Internal) | 2.475 ... 2.525 V |
| Electrical Offset Voltage | −10 ... 10 mV |
| Response Time to 90 % of IPN | 3.5 µs |
| Isolation Test Voltage | 4.3 kV |
| Operating Temperature Range | −40 ... 105 °C |
UNVERIFIED.
The HO 10-P is a None current transducer from LEM for the electronic measurement of current: DC, AC, pulsed..., with galvanic isolation, delivering an instantaneous output voltage of −2 ... 2 V.
Typical applications include UNVERIFIED.
Key characteristics from the official datasheet: frequency bandwidth 250 kHz; operating temperature -40 … 105 °C.
| General Information | |
|---|---|
| Manufacturer | LEM |
| Product Series | HO |
| Product Reference | HO 10-P |
| Primary Nominal Current | 10 A |
| Supply Voltage | 4.5 ... 5.5 V |
| Measurement | current: DC, AC, pulsed... |
| Mounting | PCB Mount |
| Application Domain | Industrial |
| Electrical Data — HO 10-P | |
|---|---|
| Primary Nominal RMS Current (IPN) | 10 A |
| Primary Current, Measuring Range (IPM) | −25 ... 25 A |
| Supply Voltage (UC) | 4.5 ... 5.5 V |
| Current Consumption (IC) | 19 ... 25 mA |
| Reference Voltage (Vref, Internal) | 2.475 ... 2.525 V |
| External Reference Voltage (Vref) | 0.5 ... 2.65 V |
| Output Voltage Range @ IPM (VOUT − Vref) | −2 ... 2 V |
| Electrical Offset Voltage (VO E) @ IP = 0 | −10 ... 10 mV |
| Theoretical Sensitivity (Gth) | 80 mV/A |
| Accuracy & Dynamic Performance | |
|---|---|
| Accuracy @ IPN | ±1.35 % of IPN |
| Accuracy @ IPN @ TA = +85 °C | ±3.75 % of IPN |
| Accuracy @ IPN @ TA = +105 °C | ±4.55 % of IPN |
| Sensitivity Error (εG) | ±0.85 % |
| Temperature Coefficient of G (TCG) | ±250 ppm/K |
| Linearity Error 0 .. IPN (εL) | ±0.5 % of IPN |
| Linearity Error 0 .. IPM (εL) | ±0.8 % of IPM |
| Temperature Coefficient of VO E (TCVOE) | ±0.12 mV/K |
| Magnetic Offset Voltage (VOM) after 2.5 × IPN | ±6 mV |
| Reaction Time @ 10 % of IPN (tra) | 2 µs |
| Response Time @ 90 % of IPN (tr) | 3.5 µs |
| Frequency Bandwidth (-3 dB) (BW) | 250 kHz |
| Over-Current Detect (peak) | 2.6 ... 3.2 × IPN (peak) |
| Insulation Coordination | |
|---|---|
| RMS Voltage for AC Insulation Test (50 Hz, 1 min) Ud | 4.3 kV |
| Impulse Withstand Voltage (1.2/50 µs) UNi | 8 kV |
| Partial Discharge Extinction Voltage @ 10 pC (rms) Ue | 1650 V |
| Creepage Distance (dCp) | 8 mm |
| Clearance (dCI) | 8 mm |
| Case Material | V0 according to UL 94 |
| Comparative Tracking Index (CTI) | 600 |
| Environmental & Mechanical Characteristics | |
|---|---|
| Ambient Operating Temperature (TA) | −40 ... 105 °C |
| Ambient Storage Temperature (TA st) | −40 ... 105 °C |
| Surrounding Temperature according to UL 508 | 105 °C |
| Mass (m) | 10 g |
| Standards & Certifications | |
|---|---|
| EN 50178 | 1997 |
| IEC 61010-1 | 2010 |
| IEC 61326-1 | 2012 |
| UL 508 | 2010 |
Note: Specifications are taken from the official HO 10-P datasheet. Parameters that could not be confirmed from the datasheet are marked UNVERIFIED.
Official technical documentation for the HO 10-P.
Outline dimensions, pin layout and connection diagrams of the HO 10-P are shown below.
| Outline Dimensions & Mechanical Data | |
|---|---|
| Mass | 10 g |
| Case Material | V0 according to UL 94 |
Note: All dimensions are in millimetres. Refer to the official datasheet for the complete dimension drawing.
Typical applications of the HO 10-P.
The characteristic curves of the HO 10-P from the official datasheet are shown below.
| Accuracy & Dynamic Characteristics | |
|---|---|
| Theoretical Sensitivity (Gth) | 80 mV/A |
| Accuracy @ IPN | ±1.35 % of IPN |
| Accuracy @ IPN @ TA = +85 °C | ±3.75 % of IPN |
| Accuracy @ IPN @ TA = +105 °C | ±4.55 % of IPN |
| Sensitivity Error (εG) | ±0.85 % |
| Temperature Coefficient of G (TCG) | ±250 ppm/K |
| Linearity Error 0 .. IPN (εL) | ±0.5 % of IPN |
| Linearity Error 0 .. IPM (εL) | ±0.8 % of IPM |
| Temperature Coefficient of VO E (TCVOE) | ±0.12 mV/K |
Note: Refer to the datasheet for the complete set of characteristic curves.