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Ratiometric transducer
| Primary Current, Measuring Range | ± 800 A / ± 800 A |
| Supply Voltage | 4.75 .. 5.25 V |
| Sensitivity | 2.5 mV/A |
| Operating Temperature Range | −40 .. 125 °C |
| Isolation Test Voltage | 2.5 kV |
| Primary Nominal Current (IPN) | ± 800 A / ± 800 A |
Special busbar shape. a constant b constant.
The HSNBV 800-R02 is an open loop current transducer from LEM for the electronic measurement of DC, AC or pulsed currents, with galvanic isolation, delivering a output noise of 10 mV.
It offers excellent accuracy and very good linearity. Typical applications include Special busbar shape. a constant b constant.
Key characteristics from the official datasheet: linearity error ± 0.5 %; frequency bandwidth 1100 Hz; operating temperature −40 .. 125 °C.
| General Information | |
|---|---|
| Manufacturer | LEM |
| Product Series | HSN |
| Product Reference | HSNBV 800-R02 |
| Primary Nominal Current | ± 800 A / ± 800 A |
| Supply Voltage | 4.75 .. 5.25 V |
| Measurement | DC, AC or pulsed currents |
| Mounting | Busbar Mount |
| Application Domain | Special busbar shape. a constant b constant |
| Electrical Data — HSNBV 800-R02 | |
|---|---|
| Primary Nominal Current (IPN) | ± 800 A / ± 800 A |
| Primary Current, Measuring Range (IPM) | ± 800 A / ± 800 A |
| Supply Voltage (UC) | 4.75 .. 5.25 V |
| Current Consumption (IC) | 20 mA |
| Sensitivity | 2.5 mV/A |
| Load Resistance (RL) | 10 kOhm |
| Insulation Resistance (RINS) | 500 MOhm |
| Accuracy & Dynamic Performance | |
|---|---|
| Ratiometricity Error | ± 0.3 % |
| Sensitivity Error | ± 1 % |
| Linearity Error | ± 0.5 % |
| Delay Time (tD) | 10 ms |
| Frequency Bandwidth | 1100 Hz |
| Output Noise | 10 mV |
| Insulation Coordination | |
|---|---|
| RMS Voltage for AC Insulation Test (50 Hz, 1 min) Ud | 2.5 kV |
| Creepage Distance (dCp) | 5.12 mm |
| Clearance (dCI) | 5.12 mm |
| Comparative Tracking Index (CTI) | PLC0 ≥ 600 V |
| Environmental & Mechanical Characteristics | |
|---|---|
| Ambient Operating Temperature (TA) | −40 .. 125 °C |
| Ambient Storage Temperature (TA st) | −40 .. 125 °C |
| Mass (m) | 49 g |
Note: Specifications are taken from the official HSNBV 800-R02 datasheet. Parameters that could not be confirmed from the datasheet are marked UNVERIFIED.
Official technical documentation for the HSNBV 800-R02.
Outline dimensions, pin layout and connection diagrams of the HSNBV 800-R02 are shown below.
| Outline Dimensions & Mechanical Data | |
|---|---|
| Mass | 49 g |
Note: All dimensions are in millimetres. Refer to the official datasheet for the complete dimension drawing.
Typical applications of the HSNBV 800-R02.
The characteristic curves of the HSNBV 800-R02 from the official datasheet are shown below.
| Accuracy & Dynamic Characteristics | |
|---|---|
| Sensitivity | 2.5 mV/A |
| Sensitivity Error | ± 1 % |
| Linearity Error | ± 0.5 % |
| Frequency Bandwidth | 1100 Hz |
| Reference Conditions | |
|---|---|
| Ambient Temperature (TA) | 25 °C, unless otherwise noted |
| Output Load Resistance (RL) | 10 kOhm |
Note: Refer to the datasheet for the complete set of characteristic curves.
Other models of the HSN Series share the same measurement principle, mounting concept and output interface family.
